Connecticut College, New London, Connecticut usa general Physics Institute, Russian Academy of Sciences, Moscow, Russia


TDL spectroscopy and depletion modulation



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A9.



TDL spectroscopy and depletion modulation:

The infrared spectrum of Ar-H2O
D. Verdes1 and H. Linnartz1,2
1Department of Chemistry, Klingelbergstrasse 80, CH 4056 Basel

2Fysische Chemie, Vrije Universiteit Amsterdam, De Boelelaan 1083,

NL 1081 HV Amsterdam
A sensitive detection technique for tunable diode laser spectroscopy is presented that is suited to study rotationally resolved spectra of weakly bound complexes. The method uses a low energetic plasma source to achieve an efficient concentration modulation in a supersonic planar jet expansion. The method is demonstrated with rotationally resolved spectra of the  (110) –  (101) and  (212) –  (101) internal rotation/vibration bands of ortho Ar-H2O in the 2 bend region of H2O. The latter transition has not been reported before and is recorded at 1658.0309(6) cm-1.
The present technique might be more generally applicable and particularly interesting when etalon fringes cause S/N ratios to drop below the detection limit.
More information is available from Chem. Phys. Lett. 355 (2002) 538.


A10.



MULTIPLE SPECIES TUNABLE DIODE LASER ABSORPTION SPECTROCOPY: APPROACHES AND APPLICATIONS
Yvan Gérard1, Robert Holdsworth2, Philip Martin2
1. University of Huddersfield, Department of Chemical and Biological Sciences,

Queensgate, Huddersfield, HD1 3DH. UK

2. University of Manchester Institute of Science and Technology (UMIST),

Department of Chemical Engineering, PO Box 88. Manchester M60 1QD. UK
Tunable Diode Laser Absorption Spectroscopy (TDLAS) has been very successful over recent years in single gas species detection [1]. However there are many applications where multispecies detection is required and in keeping the advantages of TDLAS such as sensitivity, selectivity, rapid time response and fibre optic coupling. Alternative broadband techniques for multispecies detection such as FTIR are often unsuitable due to difficulty of spectral interpretation, the necessity for chemometrics as well as sensitivity and cost.

This work describes approaches to multiplexing in TDLAS for the monitoring of several gaseous species and discusses the advantages and disadvantages of each approach. The approaches investigated are as follows:



Time-Division Multiplexing (TDM) where each laser is sequentially operated;

Modulation Frequency Division Multiplexing (MFDM) where each laser is wavelength modulated at different frequencies and detected with a single detector;

Wavelength Division Multiplexing (WDM) where each laser wavelength is separated prior to detection.

Each approach has different complexities in terms of optical arrangement, detection and data acquisition. These will be considered in a generic manner and then applied to specific applications such as the remote sensing of vehicle emissions and combustion diagnostics. Different aspects of each technique such as noise due to detection of several diode laser beams on a single detector, in the case of MFDM, sensitivity or maximum scanning frequency have been studied in order to establish the most suitable method for each application.


[1] P.A. Martin, Chemical Society Reviews, 31, 201-210, 2002


A11.



VAPOR MONITORING AND ANALYSIS OF RARE EARTH ELEMENTS BY USING DIODE-LASER-BASED SPECTROSCOPY
Hyunmin Park, Duck-hee Kwon, Kitae Lee,

Sungmo Nam and Yongjoo Rhee

Laboratory for Quantum Optics

Korea Atomic Energy Research Institute

P. O. Box 105, Yuseong, Daejeon, 305-600, Korea.
Vapor monitoring is very important in many industrial processes such as atomic deposition and material coating. Up to now, a thickness monitoring equipment using a quartz oscillator has been used commercially to monitor vapor density or flow rate. The method is simple but it has some drawback in the identification of each element in vaporizing a mixture of several elements. Recently, Laser Absorption Spectroscopy (LAS) using a diode laser has revolutionized many industrial processes by permitting accurate, portable and nonintrusive real-time monitoring of specific vapors because the method is significantly less expensive and more reliable than prior devices. However, the vapor monitoring of rare earth elements has not widely investigated even though they are very useful in industrial and medical application. In this work, we developed the vapor monitoring process of Yb and Sm which are kinds of rare earth elements by using diode-laser-based LAS. Yb and Sm are expected to be very useful for Non-destructive Test (NDT) and medical application, respectively. For Yb vapor, we used the 398.8nm transition line to measure vapor density by using a UV tunable single-mode-diode laser. Likewise, for Sm, we used two transition lines, 650.944nm and 653.395nm using a NIR diode laser. Light from above mentioned diode laser was transmitted across an atomic vapor column generated by resistive heating while the frequency of it was scanned across the atomic transition line. By comparing the amount of incident light to the amount of light transmitted after the light passes through the vapor column, the vapor density was determined using some equations. Additionally, the results of vapor monitoring were compared with ones from a thickness monitoring device and also compared with ones from theoretical considerations


A12.



DIODE LASER SPECTROSCOPY OF THE 8 BAND

OF THE SF5Cl MOLECULE
W. Raballand, N. Benoit, M. Rotger* and V. Boudon,

Laboratoire de Physique de l’Université de Bourgogne, UMR CNRS 5027,

9, avenue Alain Savary, B.P. 47 870, 21078 DIJON CEDEX, France.

*E-mail : Maud.Rotger@u-bourgogne.fr


The diode laser spectra of SF5Cl has been recorded in the 8 band region at a temperature of ca. 240 K, a pressure of 0.15 mbar and an instrumental bandwith of ca. 0.001 cm-1. Mainly four regions have been performed: a first one in the P-region (906.849-907.687 cm-1), a second one in the Q-region (910.407-910.944 cm-1), and two other ones in the R-region (913.957-914.556 cm-1 and 917.853-918.705 cm-1).

Since the SF5Cl molecule can be seen as a derivative species of the SF6 spherical top, we have developed a tensorial model based on the O(3)  Oh C4v group chaina,b. So, in this context, the isolated 3(F1u) band of SF6 splits into the 1(a1)/ 8(e) dyad of SF5Cl. This dyad has been previously recorded in the group of Pr. H. Bürger in Wuppertal by a Fourier transform infrared spectrometerc. These data have been combined to our diode laser ones in the aim of re-analyzing the 1/8 dyad of this molecule. The analysis has been done thanks to an effective Hamiltonian developed up to the fourth order and to the help of a set of programs called C4vTDSd (available at the URL: http://www.u-bourgogne.fr/LPUB/c4vTDS.html); 1346 transitions for 1, 405 (FTIR: 261, diode: 144) transitions for 8, and 406 ground state combination differences have been assigned and fitted. A global fit has been obtained with a rms of 0.00081 cm-1 for the 1(a1) band, of 0.0012 cm-1 for the FTIR data of the 8 (e) band, of 0.00055 cm-1 for the diode laser data of this same band, and of 0.00064 cm-1 for the ground state.


a M. Rotger, V. Boudon and M. Loëte, J. Mol. Spectrosc. 200, 123-130 (2000).

b M. Rotger, V. Boudon and M. Loëte, J. Mol. Spectrosc. 200, 131-137 (2000).

c M. Rotger, A. Decrette, V. Boudon, M. Loëte, S. Sander and H. Willner,

J. Mol. Spectrosc. 208, 169-179 (2001).

d Ch. Wenger, M. Rotger, V. Boudon, J. Quant. Spectrosc. Radiat. Transfer 74,

621-636 (2002).




A13.



X-ray studies and time-resolved photoluminescence on optically pumped antimonide-based midinfrared type-II-laser structures
C. Schwender, J. O. Drumm, G. Hoffmann, B. Vogelgesang, H. Fouckhardt
Research group Integrated Optoelectronics and Microoptics, Physics Department, University of Kaiserslautern, D-67663 Kaiserslautern, Germany
We report on optically pumped antimonide-based midinfrared type-II-laser samples with different mixed anion interfaces and laser emission at a wavelength of 3.4 µm. The samples have been grown by molecular beam epitaxy. They consist of a 70-period InAs/GaSb/InAs/AlSb active W-region with 1.4 µm thick AlAsSb cladding layers differing in interface composition only. The crystal structure of the samples is analyzed by high-resolution X-ray diffraction (HR-XRD). With these results the unit cell shape of each layer is determined. The degree of relaxation and strain values are extracted. The electronic properties depending on structural parameters of the samples are investigated by measurement of the non-radiative recombination coefficients (Shockley-Read-Hall and Auger recombination) using a time-resolved photoluminescence setup. Furthermore, the devices are tested in cw and pulsed edge-emitting laser operation, respectively.

From HR-XRD data the average lattice constants of the active regions are determined to be 6.0959 Å and 6.1061 Å for the different samples.



The low values of Shockley-Read-Hall coefficients achieved, which are in the range are an indication of excellent growth quality and a low number of misfit dislocations.

From a convergence equation we obtain a small cubic Auger recombination coefficient of for InSb-like interfaces and for low carrier densities at 200 K.


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