Air force 14. 1 Small Business Innovation Research (sbir) Proposal Submission Instructions
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PHASE III DUAL USE APPLICATIONS: Transition the component technology to the Air Force system integrator or payload contractor, mature it for operational insertion, and demonstrate the technology in an operational level environment. Demonstration would include, but not be limited to, demonstration in a real system. REFERENCES: 1. M. M. Opeka, I. G. Talmy, J. A. Zaykoski, “Oxidation-based materials selection for 2000°C + hypersonic aerosurfaces: Theoretical considerations and historical experience,” Journal of Materials science, 39, 5887 – 5904 (2004).
DESCRIPTION: Conventional mid-infrared materials based on the III-V (GaInSb) and the II-VI (HgCdTe) materials are relatively expensive and incompatible with silicon-based integrated circuit processing. SiGe technology is pervasive for electronic applications, but the indirect energy gap prevents extensive applications in optoelectronics. Recent progress on SiGeSn (Silicon Germanium Tin) source materials and the promise of a direct energy gap for certain compositions promises significant optical performance, similar to the III-V compounds, but with compatibility with silicon circuit processing. In order to verify the expected materials parameters, and to make further breakthroughs, innovations are needed in growth, device and structure fabrication. SiGeSn emitters and detectors must be grown and characterized to determine their attributes and limitations. One significant challenge involves the epitaxy of high quality layers on silicon and germanium substrates, depending on application. Compared to conventional SiGe epitaxy, the main limitation comes from the need to modify the growth conditions, such as reducing the substrate temperature. Novel CVD materials are required such as deuterated stannane as the Sn source. The optimum growth parameters are solicited to produce device-grade material. Once high quality epitaxy is available, it is important to find how device performance depends on material properties. With the compositional dependence of lattice constant and band gap, the optimum layer structures, and heterostructure and superlattice combinations are sought. Interesting devices based on strained layer superlattices and quantum cascade mechanisms can be designed and fabricated. While SiGe and III-V optoelectronic devices have been well characterized in terms of band offsets, optical confinement, and radiative recombination, little is known about these effects in SiGeSn. Innovative ideas leading to effective SiGeSn optoelectronic devices are solicited. PHASE I: Demonstrate the feasibility to fabricate optoelectronic devices by the growth of epitaxial SiGeSn films on Si or Ge substrates either by MBE (Molecular Beam Epitaxy) or CVD (chemical vapor deposition) methods. Provide experimental evidence for a direct energy gap and significant optoelectronic performance, including high optical absorption and efficient infrared emission. PHASE II: Fabricate and characterize infrared emitters and detectors operating within the spectral range of 2 - 5 um. Demonstrate significant performance through enhanced and longer wave performance compared to other Group-IV detectors, and by efficient light emission comparable to that of Group-III-V materials. PHASE III DUAL USE APPLICATIONS: The device quality SiGeSn films will be used to make infrared device structures as required by military and commercial customers including those who manufacture integrated circuits and IR optical emitters and detectors. REFERENCES: 1. R. Soref, J. Kouvetakis, and J. Menendez, “Advances in SiGeSn/Ge Technology,” Materials Research Society Symp. Proc., v. 958, 0958-L01-08, 2007.
silicon,” IEEE J. Quantum Electronics, v. 47 (2), pp. 213- 222, Feb. 2011. 4. J. Taraci, S. Zollner, M. R. McCartney, J. Menendez, M. A. Santana-Aranda, D. J. Smith, A. Haaland, A.V. Tutukin, G. Gundersen, G. Wolf, and J. Kouvetakis, “Synthesis of silicon-based infrared semiconductors in the Ge-Sn system using molecular chemistry methods,” J. Am. Chem. Soc., v. 123 (44), pp. 10980–10987, 2001. 5. Matthew Coppinger, John Hart, Nupur Bhargava, Sangcheol Kim, and James Kolodzey, “Photoconductivity of germanium tin alloys grown by molecular beam epitaxy”, Appl. Phys. Lett. 102, 141101 (2013). KEYWORDS: SiGeSn, SiSn, GeSn, silicon, germanium, silicon-germanium-tin, Molecular Beam Epitaxy, MBE, CVD, chemical vapor deposition, emitters, detectors, Group IV photonics, silicon photonics, optoelectronic devices, device fabrication, growth, heterostructures, radiative recombination, quantum efficiency, semiconductor characterization, superlattices, infrared AF141-003 TITLE: Variable Precision Filters KEY TECHNOLOGY AREA(S): Sensors OBJECTIVE: The development of innovative mathematical techniques for the design of digital filters allowing trade-offs between accuracy, precision and memory. DESCRIPTION: The design of finite impulse response (FIR or non-recursive) and infinite impulse response (IIR or recursive) digital filters has a long history and, over the years, many methods have been developed to design FIR, IIR filters, adaptive filters and filter cascades. The primary task of a digital filter is to alter in some prescribed manner the frequency content of a signal. In most cases, the prescribed frequency modifications cannot be achieved exactly and, hence, filter design problems involve some type of approximation or optimization. This optimization is typically a balance between simultaneously matching the magnitude response of the filter, the phase response of the filter or the group delay of the filter with the prescribed filter specifications. These challenging optimization problems are then solved using a variety of algorithms. A critical property of a filter is its application cost, especially in problems with stringent execution time and hardware constraints. Widely used techniques for filter design define optimality of design differently and may not directly reflect the cost of filter application. For example, an algorithm that produces an optimal equaripple FIR design may not yield the most efficient (cost effective) filter for achieving given specifications. In particular, it is difficult to obtain an accurate, robust and highly efficient design for a filter that requires sharp transitions within narrow sub-bands or requires a complicated structure of the pass-band. In hardware implementations, optimization at algorithm level typically achieves greater cost reduction than at architecture or logic level. If the filter design specifications are generated via a measurement process, instead of a fixed set of specifications, one would like a design algorithm that guarantees convergence and assures accuracy and efficiency of the resulting filter. This ability to automatically design in real time such filters based on measured data could significantly impact many applications. Desirable approaches will allow real-time, near optimal filter re-design that is then automatically deployed. The approach should lend itself to efficient hardware implementations on a variety of architectures. Because the design of optimized filters may require significant expert knowledge there is interest in new, robust approaches to automate filter design and make it possible for their use in real time applications. PHASE I: A clear description of the mathematical framework for the filter design and a demonstration of the feasibility of the proposed approach. Also the approach must be shown to perform the same or better than expert-guided techniques. In particular it must be demonstrated on filters with sharp transitions within a very narrow bandwidth as well as filters with a complicated structure of the passband. PHASE II: Successful completion of Phase II should provide a user-friendly software implementation of the proposed solutions within one or more application domains. PHASE III DUAL USE APPLICATIONS: Reduced power and weight for diverse military and civilian applications including communications and radar. REFERENCES: 1. C. Rader, “DSP history—the rise and fall of recursive digital filters,” IEEE Signal Process Mag., vol. 23, pp. 46–49, Nov. 2006.
DESCRIPTION: Radio-frequency micro-electromechanical systems (RF MEMS) have many performance advantages as microwave switches, tuners, filters and phase shifters with higher linearity, lower loss and lower power consumption than what are currently achievable by ferrite and semiconductor alternatives [1]. These advantages make RF MEMS attractive for radar and communication applications, especially those involving reconfigurable RF front ends. However, defense applications of RF MEMS have so far been hindered by yield, robustness and reliability issues [2]. Recently, commercial applications of RF MEMS, such as in antenna tuners for mobile handsets, have started to take off [3]. For high-yield, high-volume and low-cost fabrication, these commercially available RF MEMS are typically fabricated by using the same complimentary metal-oxide semiconductor (CMOS) technology as in the fabrication of most integrated circuits [3]. Therefore, it is desirable to take advantage of intelligent control achievable by using CMOS integrated circuits to improve the robustness and reliability of RF MEMS by orders of magnitudes, making them suitable for defense applications, as well as demanding commercial applications such as in cellular base stations [4]. Giving the interest and advance in the private sector in this topic, use of government materials, equipment, data or facilities is not anticipated. PHASE I: Research the actuation mechanism and performance characteristics of RF MEMS switches and develop the best intelligent closed-loop feedback control strategy to improve their robustness and reliability. Design an intelligent control circuit that can allow RF MEMS switches to operate over the military temperature range with long operating life. Evaluate potential improvement through simulation. PHASE II: Fabricate the control circuit and integrate it with RF MEMS switches to demonstrate reliable operations with 1) -55 °C to 125 °C ambient temperature variation, 2) week-long continuous contact, and 3) 100 billion repetitions of intermittent contact, respectively. Evaluate the trade-off between performance, robustness, reliability, cost, size and power consumption. PHASE III DUAL USE APPLICATIONS: Robust and reliable RF MEMS switches, tuners, filters and phase shifters in reconfigurable RF front ends for defense radar and communication systems, as well as cellular base stations. REFERENCES: 1. G. M. Rebeiz, RF MEMS Theory, Design Technology. Hoboken, NJ: Wiley 2003.
shifter, robustness, reliability AF141-005 TITLE: SMART Bandage for Monitoring Wound Perfusion KEY TECHNOLOGY AREA(S): Biomedical OBJECTIVE: Develop and demonstrate an innovative wound dressing that quantitatively reports tissue perfusion for monitoring and optimizing wound healing. DESCRIPTION: The current standard-of-care for wounds and grafts relies on subjective observations of tissue health that are episodic and can vary greatly between caregivers with different degrees of training (1). For example, measurements of tissue perfusion, a critical parameter necessary for wound and graft healing, currently rely on qualitative assessments of wound healing, including tissue color, temperature, capillary refill and smell. This lack of quantitative tissue oxygenation information can lead to poor outcomes; without accurate knowledge of tissue perfusion, thermal burn sites, for example, may be inadequately debrided, leading to subsequent graft failure with accompanying aesthetic and functional consequences (2). This lack of operator-independent, quantitative and non-episodic perfusion monitoring of wounds, grafts and flaps (3) has been recognized as a major unmet need for our wounded warriors. Current oxygen sensing tools rely on fragile probes that require extensive training to use correctly, provide only point measurements, and are not easily integrated into battlefield or surgical settings. Problematically, current wound assessment and therapeutic methods require the removal of dressings, resulting in further disruptions to the surgical site or wound bed that can lead to discomfort, compromised healing and complications. New objective approaches for monitoring and treating wounds are needed to improve surgical outcome and wound healing for both military personnel and civilians.
PHASE I: Develop, refine and demonstrate an oxygen sensing bandage that incorporates an oxygen sensing layer removed from direct tissue contact, and a semi-permeable barrier layer that buffers the sensing layer from room oxygen. PHASE II: Based on Phase I results, develop and test a clinical prototype system consisting of the oxygen sensing bandage, an optical imaging device, and software algorithms that will integrate the two and enable quantitative mapping of wound-healing parameters. Also in this phase, create the initial design specifications for prototyping the therapeutic release capability within the bandage. PHASE III DUAL USE APPLICATIONS: The focus in Phase III will be to conduct human studies of a fully integrated oxygen sensing and monitoring system in both battlefield and civilian settings, and to integrate the prototype therapeutic release capability into the bandage system. REFERENCES: 1. H. Park, C. Copeland, S. Henry, A. Barbul, Complex wounds and their management. The Surgical Clinics of North America 90, 1181 (2010).
AF141-006 TITLE: Shockwave Consolidation of Materials KEY TECHNOLOGY AREA(S): Materials OBJECTIVE: To develop materials that are far from thermodynamic equilibrium domain (highly doped polycrystalline materials, nano-structured systems and supersaturated structures, etc.). The processing includes shockwave consolidation and external fields. DESCRIPTION: Conventional processing techniques typically prepare materials from a melt or using powder metallurgy techniques, such as hot pressing followed by sintering. These conventional techniques enable production of materials close to the equilibrium state with relatively large grains (crystallites) within the material and cause the loss of nanostructure dimensionality. Materials design and processing approaches at or close to the equilibrium state can impose limitations on the properties.
PHASE I: 1. Define and design shockwave-driven processing techniques.
PHASE II: 1. Further improvements to material system and its properties.
PHASE III DUAL USE APPLICATIONS: Continue development of the various aspects of shockwave consolidated materials to enable accomplishment of the Phase II objectives and deliverables. Transition the component technology to a DoD system integrator, mature it for operational insertion, and validation. REFERENCES: 1. Staudhammer, K.P., Murr, L.E. And Meyer, M.A., Fundamental Issues and Applications of Shock-wave and High Strain Rate Phenomena, Elsevier Science, Oxford, 2001. 2. Gourdin, W.H., “Energy Deposition and Microstructural Modification in Dynamically Consolidated Metal Powders,” Journal of Applied Physics, Vol 55, pp 172-181, 1984. 3. Thadhani, N.N. “Shock-induced and shock-assisted solid-state chemical reactions in powder mixtures,” Journal of Applied Physics, 76 [4], p. 2129-2138 (1994). KEYWORDS: shockwave, non-equilibrium, explosive, high, power, sintering, shock consolidation, non- equilibrium material, nano-powder, electromagnetic AF141-009 TITLE: Single Photon Sources for Free Space Quantum Key Distribution Systems KEY TECHNOLOGY AREA(S): Electronics The technology within this topic is restricted under the International Traffic in Arms Regulation (ITAR), 22 CFR Parts 120-130, which controls the export and import of defense-related material and services, including export of sensitive technical data, or the Export Administration Regulation (EAR), 15 CFR Parts 730-774, which controls dual use items. Offerors must disclose any proposed use of foreign nationals (FNs), their country(ies) of origin, the type of visa or work permit possessed, and the statement of work (SOW) tasks intended for accomplishment by the FN(s) in accordance with section 5.4.c.(8) of the solicitation and within the AF Component-specific instructions. Offerors are advised foreign nationals proposed to perform on this topic may be restricted due to the technical data under US Export Control Laws. Please direct questions to the AF SBIR/STTR Contracting Officer, Ms. Kristina Croake, kristina.croake@us.af.mil. OBJECTIVE: Develop and demonstrate an on demand single photon source for use in a free-space Quantum Key Distribution (QKD) satellite to ground configuration. DESCRIPTION: Security in quantum key distribution (QKD) arises from the principle that the quantum state of a single photon, prepared in an unknown basis, can only be determined with a probabilistic outcome. This fact both limits the information that may be gleaned by an eavesdropper and allows eavesdropping to be detected via errors that are introduced into the quantum channel.
2. The center wavelength should lie within an atmospheric transmission band and within a region of high detector quantum efficiency. 3. The spectral emission width should be of the order of 1 GHz. Directory: wp-content -> uploads -> 2016 2016 -> 2017 afoCo Landmark Scholarship Program 2016 -> Instructions for the Preparation of Camera-Ready Contributions to the Conference Proceedings 2016 -> Step student Scholarships for Year 10-13 2016 -> The united church of canada 2016 -> Idan raichel biography – May 2016 Brief Producer, keyboardist, Lyricist, composer and Performer Idan Raichel 2016 -> An introduction to centre’s interventions expanding access to justice 2016 -> Sanchar Shakti 2016 -> Unit analysis should help here. We want number of bananas 2016 -> The Autobiography of Elder Joseph Bates 2016 -> The Great Heat and the Rhode Island Deep Water Bay Scallop (Argopecten irradians) Fishery 1875-1905 Download 1.72 Mb. Share with your friends:
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