DC/DC converters with integrated secondary synchronous rectification drivers
Benefit
Higher dc-to-dc converter efficiency
- Only 3.6 mW (max. at 4.5 V rating)
- 23mΩ nC rDS(on) x Qgd
Exceptionally low Qgd/Qgs ratio of 0.37 provides very high shoot-thru immunity
Industry’s lowest on-resistance and lowest on-resistance-times gate-charge figure of merit
By reverse forming the leads of a DPAK, the packages can be mounted inversely so a heat sink can be mounted on top. The heat sink allows the device to operate cooler, lowering effective on-resistance and allowing higher current capability.
It allows the board to operate cooler and undergo less thermal stress for better reliability.
Space and cost is saved when less MOSFETs are used.
12 – 75 V input voltage (withstands 100 V for 100 ms)
Output power of up to 150 W
Two Integrated primary MOSFETs drivers, with 1 A of current capability
The first devices utilizing both WFET and TrenchFET Gen II technology offer both low rDS(on) and rDS(on) x Qgd, providing low conduction and switching losses for lower power consumption and higher efficiency than competiting devices
An ultra-low QGD/QGS ratio of just 0.37 provides significant shoot-through protection
Available in SO-8 and thermally enhanced PowerPAK SO-8 packaging
Pin compatible with UCC280x and enhanced performance