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COMPUTER





IRDC

Power MOSFETs







Vishay

Part Number

TFDU6102

TFBS6614


Si4390DY

Si4392DY

Si7390DP

Si7392DP


SUDxxN02-xxP

SUMxxN02-xxP



Si7xxx

Description

  • WFET power MOSFETs

  • 20-V VDS / 20-V VGS power MOSFETs

  • PowerPAK power MOSFETs

Benefit

  • TFBS6614 smallest FIR transceiver (2.7 mm height)

  • Separate Vlogic as low as 1.5 V

  • Excellent sensitivity

  • Distance range typical 1 m

  • 1/3 the Crss for half the Qgd while maintaining excellent on-resistance




  • Industry’s lowest on-resistacne and lowest on-resistance-times gate-charge figure of merit

  • Industry’s lowest on-resistacne and lowest on-resistance-times gate-charge figure of merit in these types of thermally enhanced packages

Competition

  • Agilent

  • IR

  • Philips

  • Infineon

  • IR

  • IR

  • Hitachi

  • Fairchild

Target Market

  • Notebook PCs

  • Smart phones

  • PDAs

  • High side MOSFET in synchronous buck dc-to-dc converters in notebook PCs

  • DC/DC converters in desktop and server applications

  • High and/or low side MOSFETs in synchronous buck dc-to-dc converters

Remarks



  • VSA-PT0011-0210

  • VSA-PT0012-0210

  • VSA-PT0008-0209




Power MOSFETs










Vishay

Part Number

Various Sixxxx

Si4368DY

Si7668DP


SUR50N03-06P

SUR50N03-09P

SUR50N03-12P

SUR50N03-16P



SUR70N02-04P

Si4308DY


Description

  • WFET and TrenchFET Gen II Power MOSFETs

  • Reverse lead DPAK Power MOSFETs

  • Dual N-channel 30V (D-S)

  • MOSFETs with Schottky diodes

Benefit

  • Lowest on-resistance across singles and duals in –12 V, –20 V, and –30 V devices in SOT-23, TSOP-6, SO-8, PowerPAK 1212-8, TSSOP-8, and PowerPAK SO-8 packaging

  • The first devices utilizing both WFET and TrenchFET Gen II technology offer both low rDS(on) and rDS(on) x Qgd, providing low conduction and switching losses for lower power consumption and higher efficiency than competiting devices

  • An ultra-low QGD/QGS ratio of just 0.37 provides significant shoot-through protection

  • Available in SO-8 and thermally enhanced PowerPAK SO-8 packaging

  • By reverse forming the leads of a DPAK, the packages can be mounted inversely so a heat sink can be mounted on top. The heat sink allows the device to operate cooler, lowering effective on-resistance and allowing higher current capability.

  • It allows the board to operate cooler and undergo less thermal stress for better reliability.

  • Space and cost is saved when less MOSFETs are used.

  • Integrated solution for synchronous

  • DC/DC converter

  • PWM optimized

  • Optimized QGD/QGS ratio to prevent "shoot-thru" situation

  • 7 A output current capability from going into a "shoot-thru" situation even when using less expensive 3 ohm drivers

Competition

  • IR

  • Fairchild

  • IR

  • SGS Thomson

  • IR

  • Fairchild

  • Infineon

  • Hitachi

  • IR

  • Fairchild

Target Market

  • Low-side MOSFET in Synchronous Buck (single and multi-phase configurations) in Notebook PCs, servers and VRM modules

  • Notebook PCs

  • Desktop computers

  • VGA, DDR power application

Remarks

  • VSA-PL0007-0302

  • New Product Information (NPI) due out 2/04

  • See New Product Information (NPI)





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